New Advances in Materials Science and Engineering Vol. 1

Abstract

Nanostructured thin films have been prepared by using various deposition techniques. The obtain films showed unique physical, optical and electrical properties. Therefore, these materials could be used in solar cell, optoelectronic, laser and sensor devices. In this work, the preparation of metal chalcogenide thin films by using electrodeposition method was reported. Electrodeposition method has many advantages such as low temperature is required, low cost investment, can produce desired film over large surface area and can control the thickness of the film. Characterization of obtained films was investigated by using various tools. The band gap values are in the range of 1.15 to 2.19 eV. Annealed films indicated excellent crystallinity if compared to as-deposited films.